Atomic Layer Deposition (ALD) is a high precision chemical vapor deposition (CVD) based process. Thin Film Deposition TechnologyThis is a technique for depositing material materials in the form of single-atom films based on chemical vapor phases layer by layer on the substrate surface. Two or more precursor chemicals, each containing a different element of the material being deposited, are introduced one at a time onto the substrate surface. Each precursor saturates the surface to form a monolayer of material.

The growth principle of ALD is similar to conventional chemical weather deposition (CVD), but in ALD, the reaction precursors are deposited alternately during the deposition process, and the chemical reaction of the new layer of atoms is directly associated with the previous layer, with only one layer of atoms deposited per reaction. Having self-limiting growth characteristics allows the film to be deposited onto the substrate conformally and without pinholes. ThereforeThe number of deposition cycles can be controlled to achieve precise control of film thickness.

Atomic layer deposition technology features and advantages

High accuracy.The thickness of the substrate can be easily and precisely controlled by controlling the reaction cycle, and the thickness of the film can be as accurate as the thickness of an atom.

Excellent three-dimensiona